• DocumentCode
    2686265
  • Title

    Silicon carbide microwave MESFET research at DERA Malvern

  • Author

    Uren, M.J. ; Hilton, K.P. ; Davis, R.G. ; Ball, G. ; Guest, J.J. ; Smith, B.H. ; Williams, G. ; Willis, H.

  • Author_Institution
    DERA, Malvern, UK
  • fYear
    1999
  • fDate
    36186
  • Firstpage
    42430
  • Lastpage
    42435
  • Abstract
    Microwave devices fabricated in SiC offer huge benefits compared to conventional GaAs based devices, in particular offering enhanced power handling and higher voltage operation. Here we report on progress towards the establishment of a power MESFET process, including highly encouraging DC and S-parameter results from single finger devices, and initial results for multi-finger power devices. Simulations of the ultimate microwave power performance of wide bandgap FET devices are presented
  • Keywords
    microwave power transistors; DERA Malvern; S-parameter results; SiC; microwave MESFET; microwave power performance; multi-finger power devices; power handling; single finger devices; wide bandgap FET devices;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Advances in Semiconductor Devices (Ref. No. 1999/025), IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19990151
  • Filename
    755808
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2686265