DocumentCode
2686276
Title
Fabrication and characterisation of AlGaN/GaN MODFETs for microwave power applications
Author
Leier, H. ; Vescan, A. ; Dietrich, R. ; Wieszt, A. ; Tobler, H.
Author_Institution
Res. & Technol., Daimler-Chrysler AG, Ulm, Germany
fYear
1999
fDate
36186
Firstpage
42461
Lastpage
42465
Abstract
AlGaN/GaN MODFETs reveal a very large potential to be used as microwave power devices in future communication, navigation and military surveillance systems. A increasing number of companies and research institutes are currently engaged in GaN/AlGaN FET device research headed by US American groups. In this paper we discuss the potential and the challenge of MODFETs based on GaN/AlGaN with special emphasis on the actual status of GaN/AlGaN MODFET technology at Daimler-Chrysler
Keywords
aluminium compounds; AlGaN-GaN; AlGaN/GaN MODFET; microwave power device;
fLanguage
English
Publisher
iet
Conference_Titel
Advances in Semiconductor Devices (Ref. No. 1999/025), IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19990152
Filename
755810
Link To Document