Design of a low voltage band-gap reference circuit for OLED-On-Silicon

This paper presents a design of low voltage band-gap reference circuit for OLED-on-silicon. In order to make the op-amp working in the high-gain area, the boost technique is used in the amplifier to increase the gate drive ability. The reference source uses first-order temperature compensation design to eliminate the temperature influence to voltage source. Simultaneously, the power dissipation is greatly decrease because the amplifier designed is working in the weak inversion layer. The simulation is conducted in chartered 0.35 um 2-poly 4-metal 3.3 V/18 V high voltage process, and the results show that the proposed design meets the scheduled requirement and realizes the application of source voltage under 1.8 V.