• DocumentCode
    2686699
  • Title

    A 30 GHz Low Noise FET Amplifier

  • Author

    Watkins, E.T. ; Schellenberg, J.M. ; Yamasaki, H.

  • fYear
    1985
  • fDate
    4-6 June 1985
  • Firstpage
    321
  • Lastpage
    323
  • Abstract
    A low noise FET amplifier has been developed for the 27.5 to 30 GHz communications band using a new 1/4 m gate GaAs FET device. The 3-stage amplifier exhibits a maximum noise figure of 3.2 dB across the 27.5 to 30 GHz band with an associated gain of 23 +-0.5 dB.
  • Keywords
    Aircraft; Bandwidth; Equivalent circuits; FETs; Frequency; Gallium arsenide; Low-noise amplifiers; Millimeter wave technology; Noise figure; Noise level;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1985 IEEE MTT-S International
  • Conference_Location
    St. Louis, MO, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1985.1131974
  • Filename
    1131974
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2686699