DocumentCode
2687172
Title
GaAs Monolithic Transferred-Electron Devices for Millimeter Wave Applications
Author
Rolland, P.A. ; Cappy, A. ; Friscourt, M.R.
fYear
1985
fDate
4-6 June 1985
Firstpage
427
Lastpage
430
Abstract
In this paper the authors point out the existence of two different operating modes in a planar GaAs transferred-electron oscillator with a current limiting MESFET cathode. The respective advantages and drawbacks of these two modes are discussed on the basis of further monolithic integration. The influence of the operating conditions on the RF performance are given in the 100 GHz window.
Keywords
Cathodes; Current limiters; Gallium arsenide; Indium phosphide; MESFETs; Millimeter wave devices; Oscillators; Radio frequency; Schottky barriers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1985 IEEE MTT-S International
Conference_Location
St. Louis, MO, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1985.1132002
Filename
1132002
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