Single wafer in-situ multiprocessing

Author

Saraswat, Krishna C. ; Wright, Peter ; Wood, Sam ; Moslehi, Mehrdad M.

Author_Institution

Center for Integrated Syst., Stanford Univ., CA, USA

fYear

1989

fDate

17-19 May 1989

Firstpage

75

Lastpage

78

Abstract

A description is given of the development of a novel single-wafer multiprocessing reactor for flexible VLSI manufacturing that combines lamp heating, remote microwave plasma processing, and photo processing in a single cold-wall chamber for multilayer in-situ growth and deposition of dielectrics, semiconductors, and metals. Three examples of multiprocessing technology are discussed: low-temperature growth of ultrathin dielectrics, selective and nonselective chemical vapor deposition of tungsten, and epitaxial growth of silicon and silicon-germanium alloys

Keywords

VLSI; chemical vapour deposition; elemental semiconductors; heat treatment; integrated circuit manufacture; photolithography; semiconductor growth; silicon; sputter etching; vapour phase epitaxial growth; Si growth; Si-Ge alloys; VLSI manufacturing; W deposition; cold-wall chamber; dielectric deposition; epitaxial growth; lamp heating; low-temperature growth; metal deposition; multilayer in-situ growth; nonselective chemical vapor deposition; photo processing; plasma etching; remote microwave plasma processing; selective CVD; semiconductor growth; single-wafer multiprocessing reactor; thermal processing; ultrathin dielectrics; Dielectrics; Electromagnetic heating; Flexible manufacturing systems; Inductors; Lamps; Manufacturing processes; Plasma chemistry; Plasma materials processing; Semiconductor device manufacture; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/VTSA.1989.68586

Filename

68586