DocumentCode
2688372
Title
Electromigration behavior of the Ni/SnZn/Cu solder interconnect
Author
Zhang, X.F. ; Guo, J.D. ; Shang, J.K.
Author_Institution
Shenyang Nat. Lab. for Mater. Sci., Chinese Acad. of Sci., Shenyang
fYear
2008
fDate
28-31 July 2008
Firstpage
1
Lastpage
4
Abstract
Electromigration in the Ni/SnZn/Cu solder interconnect was studied with an average current density of 4.1times104A/cm2 for 168.5h at 150degC. When the electrons flowed from the Ni side to the Cu side, uniform layers of Ni5Zn21 and Cu5Zn8 were formed at the Ni/SnZn and Cu/SnZn interfaces. The results are similar to those without passage of an electric current. However, upon reversing the current direction where electron flow was from the Cu side to the Ni side, thicker Cu6Sn5 phase replaced Ni5Zn21 phase at the Ni/SnZn interface, whereas at the Cu/SnZn interface, thicker beta-CuZn phase replaced Cu5Zn8 phase. Meanwhile, Cu-Sn phases also appeared at the Cu/SnZn interface. A kinetic model, based on the Zn and Cu mass transport in the sample, was presented to explain the growth of the intermetallic compound at the anode and cathode.
Keywords
copper alloys; electromigration; integrated circuit interconnections; nickel alloys; solders; tin alloys; zinc alloys; Ni-SnZn-Cu; anode; cathode; electromigration behavior; intermetallic compound; kinetic model; solder interconnect; temperature 150 C; time 168.5 h; Copper; Current density; Electromigration; Electrons; Flip chip; Joining materials; Materials science and technology; Metallization; Packaging; Soldering;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-2739-0
Electronic_ISBN
978-1-4244-2740-6
Type
conf
DOI
10.1109/ICEPT.2008.4607115
Filename
4607115
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