• DocumentCode
    2688372
  • Title

    Electromigration behavior of the Ni/SnZn/Cu solder interconnect

  • Author

    Zhang, X.F. ; Guo, J.D. ; Shang, J.K.

  • Author_Institution
    Shenyang Nat. Lab. for Mater. Sci., Chinese Acad. of Sci., Shenyang
  • fYear
    2008
  • fDate
    28-31 July 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Electromigration in the Ni/SnZn/Cu solder interconnect was studied with an average current density of 4.1times104A/cm2 for 168.5h at 150degC. When the electrons flowed from the Ni side to the Cu side, uniform layers of Ni5Zn21 and Cu5Zn8 were formed at the Ni/SnZn and Cu/SnZn interfaces. The results are similar to those without passage of an electric current. However, upon reversing the current direction where electron flow was from the Cu side to the Ni side, thicker Cu6Sn5 phase replaced Ni5Zn21 phase at the Ni/SnZn interface, whereas at the Cu/SnZn interface, thicker beta-CuZn phase replaced Cu5Zn8 phase. Meanwhile, Cu-Sn phases also appeared at the Cu/SnZn interface. A kinetic model, based on the Zn and Cu mass transport in the sample, was presented to explain the growth of the intermetallic compound at the anode and cathode.
  • Keywords
    copper alloys; electromigration; integrated circuit interconnections; nickel alloys; solders; tin alloys; zinc alloys; Ni-SnZn-Cu; anode; cathode; electromigration behavior; intermetallic compound; kinetic model; solder interconnect; temperature 150 C; time 168.5 h; Copper; Current density; Electromigration; Electrons; Flip chip; Joining materials; Materials science and technology; Metallization; Packaging; Soldering;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on
  • Conference_Location
    Shanghai
  • Print_ISBN
    978-1-4244-2739-0
  • Electronic_ISBN
    978-1-4244-2740-6
  • Type

    conf

  • DOI
    10.1109/ICEPT.2008.4607115
  • Filename
    4607115