DocumentCode
2688493
Title
Electromigration simulation with consideration of the atomic concentration gradient
Author
Chen, Xuefan ; Liang, Lihua ; Liu, Yong
Author_Institution
Fairchild-ZJUT Joint Lab., Zhejiang Univ. of Technol., Hangzhou
fYear
2008
fDate
28-31 July 2008
Firstpage
1
Lastpage
7
Abstract
An enhanced finite element modeling methodology based on commercial software ANSYS Multi-physics and FORTRAN code is developed for the simulation of electromigration. The electronic migration formulation taking into account the effects of the atomic concentration gradient (ACG) has been developed to show the difference in the electromigration (EM) failure mechanisms. An improved algorithm of total atomic flux and corresponding EM formulation are presented with the electro-migration, the thermo-migration, the stress-migration and the atomic concentration gradient migration. The interaction of the various driving forces during the EM process is investigated. Finite element simulations are performed for solder joints under high current density with and without consideration of atomic concentration gradient. Simulations show that atomic concentration gradient migration canpsilat be ignored. It is also found that the atomic concentration distribution majority depends on the current density, atomic concentration gradient and the stress gradient of the structure.
Keywords
current density; electromigration; finite element analysis; integrated circuit metallisation; solders; ANSYS Multiphysics; FORTRAN code; atomic concentration gradient migration; current density; electromigration failure mechanisms; electronic migration formulation; finite element modeling; metallization structures; solder joints; stress gradient; stress-migration; thermomigration; total atomic flux; Atomic measurements; Current density; Electromigration; Electrons; Equations; Failure analysis; Finite element methods; Metallization; Soldering; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Electronic Packaging Technology & High Density Packaging, 2008. ICEPT-HDP 2008. International Conference on
Conference_Location
Shanghai
Print_ISBN
978-1-4244-2739-0
Electronic_ISBN
978-1-4244-2740-6
Type
conf
DOI
10.1109/ICEPT.2008.4607121
Filename
4607121
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