DocumentCode
2688670
Title
Unstable states of BGaN(P, As) / Ga(P, As) materials
Author
Núñez, Gabriela Rosas ; Albarrán, Salvador Felipe Daz ; Elyukhin, Vyacheslav Alexander ; Peralta, Patricia Rodríguez
Author_Institution
Escuela Super. de Ing. Mec. y Electr.-IPN, Mexico City, Mexico
fYear
2011
fDate
26-28 Oct. 2011
Firstpage
1
Lastpage
5
Abstract
The spinodal decomposition ranges of low N-content BxGa1-xNy (P,As)1-y/Ga(P,As) alloys grown on Ga(P,As) (001) substrates, are described. The alloys are represented as strictly regular solutions. In the analysis, we take into account the transformation of the bonds, strain and elastic energies. Spinodal decomposition ranges of BxGa1-xNyP1-y alloys with compositions x = 0.01, 0.013, 0.015 and 0 ≤ y ≤ 0.08 are demonstrated up to 1100°C, and to BxGa1-xNyAs1-y with compositions x = 0.008, 0.01, 0.011, 0.012 and 0 ≤ y ≤ 0.06 are demonstrated up to 1180°C. The estimations show that the decomposition ranges are larger when the transformation of the bonds is not considered.
Keywords
bonds (chemical); boron compounds; crystal growth from solution; gallium arsenide; gallium compounds; semiconductor growth; spinodal decomposition; (001) substrates; BGaN(PAs)-Ga(PAs); Ga(PAs); bonds; elastic energy; spinodal decomposition; strain energy; temperature 1100 degC to 1180 degC; unstable states; Compounds; Metals; Solids; Strain; Substrates; Temperature distribution; III–V quaternary alloys; Spinodal decomposition range; nitrides;
fLanguage
English
Publisher
ieee
Conference_Titel
Electrical Engineering Computing Science and Automatic Control (CCE), 2011 8th International Conference on
Conference_Location
Merida City
Print_ISBN
978-1-4577-1011-7
Type
conf
DOI
10.1109/ICEEE.2011.6106065
Filename
6106065
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