• DocumentCode
    2688670
  • Title

    Unstable states of BGaN(P, As) / Ga(P, As) materials

  • Author

    Núñez, Gabriela Rosas ; Albarrán, Salvador Felipe Daz ; Elyukhin, Vyacheslav Alexander ; Peralta, Patricia Rodríguez

  • Author_Institution
    Escuela Super. de Ing. Mec. y Electr.-IPN, Mexico City, Mexico
  • fYear
    2011
  • fDate
    26-28 Oct. 2011
  • Firstpage
    1
  • Lastpage
    5
  • Abstract
    The spinodal decomposition ranges of low N-content BxGa1-xNy (P,As)1-y/Ga(P,As) alloys grown on Ga(P,As) (001) substrates, are described. The alloys are represented as strictly regular solutions. In the analysis, we take into account the transformation of the bonds, strain and elastic energies. Spinodal decomposition ranges of BxGa1-xNyP1-y alloys with compositions x = 0.01, 0.013, 0.015 and 0 ≤ y ≤ 0.08 are demonstrated up to 1100°C, and to BxGa1-xNyAs1-y with compositions x = 0.008, 0.01, 0.011, 0.012 and 0 ≤ y ≤ 0.06 are demonstrated up to 1180°C. The estimations show that the decomposition ranges are larger when the transformation of the bonds is not considered.
  • Keywords
    bonds (chemical); boron compounds; crystal growth from solution; gallium arsenide; gallium compounds; semiconductor growth; spinodal decomposition; (001) substrates; BGaN(PAs)-Ga(PAs); Ga(PAs); bonds; elastic energy; spinodal decomposition; strain energy; temperature 1100 degC to 1180 degC; unstable states; Compounds; Metals; Solids; Strain; Substrates; Temperature distribution; III–V quaternary alloys; Spinodal decomposition range; nitrides;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electrical Engineering Computing Science and Automatic Control (CCE), 2011 8th International Conference on
  • Conference_Location
    Merida City
  • Print_ISBN
    978-1-4577-1011-7
  • Type

    conf

  • DOI
    10.1109/ICEEE.2011.6106065
  • Filename
    6106065