The mechanism of formation, growth and transformation of microdefects in dislocation-free monocrystals of silicon

Author

Talanin, Vitaly I.

Author_Institution

Zaporozhye State Eng. Acad., Ukraine

fYear

2000

fDate

2000

Firstpage

87

Lastpage

90

Abstract

During the growth of dislocation-free monocrystals of silicon the main influence on the formation and distribution of microdefects are the process of growth and cooling of crystals and the axial temperature gradient. Complex research on undoped dislocation-free silicon monocrystals obtained by zone melting are carried out. The crystals were obtained with various growth rates under the various types of processing such as thermal processing and ion implantation. The methods of electron and optical microscopy were used to examine the microdefects

Keywords

dislocation loops; electron microscopy; elemental semiconductors; interstitials; optical microscopy; semiconductor growth; silicon; vacancies (crystal); zone melting; Si; axial temperature gradient; crystal growth; dislocation-free monocrystals; electron microscopy; growth rate; interstitial dislocation loops; interstitial microdefects; ion implantation; microdefects formation; microdefects growth; microdefects transformation; optical microscopy; thermal processing; vacancies; zone melting; Crystallization; Crystals; Electron microscopy; Fabrication; Impurities; Lattices; Optical microscopy; Silicon; Space technology; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2000. EDM 2000. Siberian Russian Student Workshops on

Conference_Location

Novosibirsk

Print_ISBN

5-7782-0291-1

Type

conf

DOI

10.1109/SREDM.2000.888561

Filename

888561