Modelling of anisotropic conductivity in strained n-silicon

Author

Konovalov, A.A. ; Makarov, E.A.

Author_Institution

Dept. of Semicond. Devices & Microelectron., Novosibirsk State Tech. Univ., Russia

fYear

2000

fDate

2000

Firstpage

91

Lastpage

102

Abstract

The results of two-dimensional modelling of the anisotropic conductivity, which arises under monoaxial strain of electronic silicon, are indicated. It is shown, that using the nine-point template of digitization allows to take into account the modifications of a y-component of field strength, both in y-, and x-directions. As an example, the dependence of the output voltage of transversal sensors on axial mechanical stress, is presented

Keywords

Laplace equations; carrier mobility; electric sensing devices; electrical conductivity; elemental semiconductors; piezoresistance; piezoresistive devices; semiconductor device models; silicon; Laplace equation; Si; anisotropic conductivity; axial mechanical stress; carrier mobility; continuity equation; drift current; monoaxial strain; nonlinearity; output voltage; piezoresistance; strained n-type silicon; transversal sensors; two-dimensional modelling; Anisotropic magnetoresistance; Capacitive sensors; Conductivity; Electrons; Mechanical sensors; Microelectronics; Neodymium; Semiconductor devices; Tensile stress; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Materials, 2000. EDM 2000. Siberian Russian Student Workshops on

Conference_Location

Novosibirsk

Print_ISBN

5-7782-0291-1

Type

conf

DOI

10.1109/SREDM.2000.888565

Filename

888565