Degradation of time-dependent dielectric breakdown characteristics of MOS capacitors by silicon surface roughness

Author

Nakanishi, T. ; Kishii, S. ; Ohsawa, A. ; Honda, K.

Author_Institution

Fijitsu Lab. Ltd., Kawasaki, Japan

fYear

1989

fDate

17-19 May 1989

Firstpage

79

Lastpage

82

Abstract

The roughness of the Si-SiO₂ interface was observed using reflection electron microscopy, and the influence of roughness on MOS device reliability was investigated. It was found that the original surface roughness of the Si wafer degrades the time-dependent dielectric breakdown (TDDB) characteristics of MOS capacitors. Large surface roughness causes Si-SiO₂ interface roughness, which enhances the tunneling current through the oxide. Large tunneling current leads to poor TDDB characteristics

Keywords

capacitors; electric breakdown of solids; electron microscope examination of materials; elemental semiconductors; metal-insulator-semiconductor devices; reliability; semiconductor-insulator boundaries; silicon; silicon compounds; surface topography; tunnelling; MOS capacitors; MOS device reliability; Si wafer roughness; Si-SiO₂ interface roughness; breakdown characteristics degradation; reflection electron microscopy; surface roughness; time-dependent dielectric breakdown; tunnelling current enhancement; Current measurement; Degradation; Density measurement; Dielectric breakdown; Electrons; MOS capacitors; Rough surfaces; Silicon; Surface roughness; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, Systems and Applications, 1989. Proceedings of Technical Papers. 1989 International Symposium on

Conference_Location

Taipei

Type

conf

DOI

10.1109/VTSA.1989.68587

Filename

68587