DocumentCode
2690363
Title
5-GHz 20-Watt GaAs FET Amplifier for MLS
Author
Hirai, K. ; Takamatsu, H. ; Morikawa, S. ; Tomita, N.
fYear
1986
fDate
2-4 June 1986
Firstpage
447
Lastpage
450
Abstract
5-GHz 20-watt GaAs FET amplifier using two state-of-the-art high power FETs in the final stage was developed for MLS applications. GaAs FET limiter with unique input/output characteristics and efficient operation of the final FETs were studied for this purpose. Stabilization of output power within 1dB peak-to-peak by means of open loop control was achieved of PIN diode attenuator.
Keywords
Gallium arsenide; High power amplifiers; Microwave FETs; Multilevel systems; Power amplifiers; Power generation; Pulse amplifiers; Radio frequency; Radiofrequency amplifiers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1986 IEEE MTT-S International
Conference_Location
Baltimore, MD, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1986.1132217
Filename
1132217
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