DocumentCode
2690783
Title
Parallel operation of high power IGBTs
Author
Médaule, D. ; Yu, Y.
Author_Institution
Mitsubishi EPHQ, Le Mans, France
fYear
1995
fDate
34814
Firstpage
42401
Lastpage
42409
Abstract
The paper shows third generation IGBTs behaviour and matching when connected in parallel. Test results give the actual current sharing between modules with different case temperature, Vcesat and wiring inductances. In the case of strong Vcesat or temperature differences it can be seen there is no catastrophic current mismatching. For inductive loads, the paper presents IGBT switching waveforms and summarises recommendations for parallelling
Keywords
insulated gate bipolar transistors; load (electric); power bipolar transistors; power semiconductor switches; semiconductor device models; semiconductor device testing; Vcesat; case temperature; current matching; current sharing; inductive loads; parallel operation; power IGBTs; recommendations; switching waveforms; third generation; wiring inductance;
fLanguage
English
Publisher
iet
Conference_Titel
IGBT Propulsion Drives, IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19950529
Filename
477971
Link To Document