DocumentCode
2691074
Title
Pulsed-power applications to materials science
Author
Yatsui, K. ; Jiang, W. ; Suematsu, H. ; Suzuki, T. ; Endo, F. ; Cho, C. ; Arikado, T.
Author_Institution
Extreme Energy Density Res. Inst., Nagaoka Univ. of Technol., Niigata, Japan
Volume
1
fYear
2003
fDate
15-18 June 2003
Firstpage
29
Abstract
It is known that an intense pulsed ion beam interaction with solid targets is able to produce high-density ablation plasma due to its short range. Efficient preparation of thin films has been succeeded very quickly, without heating the substrate during the deposition, called pulsed ion-beam evaporation (IBE). By the rapid cooling of the ablation plasma produced by IBE with the ambient gas, ultrafine nanosize powders (UNP) has been successfully synthesized as well. The UNPs have also been produced by pulsed wire discharge (PWD). For the practical applications, highly repetitive pulsed power generators have been developed using semiconductor switches such as MOS-FET, IGBT, and SI thyristor.
Keywords
insulated gate bipolar transistors; ion beam effects; power semiconductor switches; pulse generators; pulsed power technology; thin films; thyristors; IGBT; MOSFET; SI thyristor; ambient gas; high-density ablation plasma; intense pulsed ion beam; materials science; pulsed ion-beam evaporation; pulsed power generators; pulsed wire discharge; pulsed-power applications; semiconductor switches; solid targets; thin films; ultrafine nanosize powders; Cooling; Heating; Identity-based encryption; Ion beams; Materials science and technology; Plasma applications; Plasma materials processing; Solids; Sputtering; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Pulsed Power Conference, 2003. Digest of Technical Papers. PPC-2003. 14th IEEE International
Conference_Location
Dallas, TX, USA
Print_ISBN
0-7803-7915-2
Type
conf
DOI
10.1109/PPC.2003.1277654
Filename
1277654
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