DocumentCode
2691912
Title
A physical 3-D analytical model for the threshold voltage considering RDF
Author
Panagopoulos, Georgios ; Roy, Kaushik
Author_Institution
Sch. of ECE, Purdue Univ., West Lafayette, IN, USA
fYear
2009
fDate
22-24 June 2009
Firstpage
81
Lastpage
82
Abstract
In the proposed approach the variations of threshold voltage and surface potential are modeled by considering a nonuniform doping profile of the channel region. We consider the contribution of all the dopants to the surface potential. This is necessary because for small transistor dimensions, each discrete dopant contributes significantly towards device performance parameters.
Keywords
integrated circuit modelling; Monte Carlo; channel region; physical 3D analytical model; threshold voltage; Analytical models; Circuit optimization; Circuit simulation; Computational modeling; Electrons; Fluctuations; Random variables; Resource description framework; Semiconductor process modeling; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2009. DRC 2009
Conference_Location
University Park, PA
Print_ISBN
978-1-4244-3528-9
Electronic_ISBN
978-1-4244-3527-2
Type
conf
DOI
10.1109/DRC.2009.5354849
Filename
5354849
Link To Document