Pressure and UV light sensitive electron field emission properties of lateral ZnO nanowires with an emitter-to-emitter configuration

Author

Hsu, Wen I. ; Wang, Shui Jinn ; Tsai, Wei Chih ; Tseng, Chih Ren ; Hsu, Wen Chu

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

fYear

2009

fDate

22-24 June 2009

Firstpage

125

Lastpage

126

Abstract

This study demonstrates the synthesis of lateral zinc oxide nanowires (ZnO NWs) with an emitter-to-emitter configuration on a simple Pt/AZO bi-layer structure by hydrothermal synthesis (HTS) method and presents their superior electron field emission (FE) characteristics and pressure/UV light (254, 366 nm) sensing properties. The highly sensitive response to both pressure and UV illumination is attributed to the use of an emitter-to-emitter configuration with short interelectrode spacing as well as the good crystal quality of the lateral ZnO NWs. Experimental results presented in this work indicate that the lateral ZnO NWs can be a potential candidate for devices applications of gas, pressure, and UV light sensors.

Keywords

electron field emission; nanowires; ultraviolet sources; zinc compounds; UV illumination; UV light sensitive electron field emission properties; UV light sensors; ZnO; bi-layer structure; crystal quality; emitter-to-emitter configuration; hydrothermal synthesis method; interelectrode spacing; nanowires; Chemical sensors; Electrodes; Electron emission; High temperature superconductors; Iron; Lighting; Low voltage; Nanowires; Thermal resistance; Zinc oxide;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2009. DRC 2009

Conference_Location

University Park, PA

Print_ISBN

978-1-4244-3528-9

Electronic_ISBN

978-1-4244-3527-2

Type

conf

DOI

10.1109/DRC.2009.5354871

Filename

5354871