Multi-level lateral phase change memory based on N-doped Sb70Te30 super-lattice like structure

Author

Yang, H.X. ; Shi, L.P. ; Lee, H.K. ; Zhao, R. ; Li, M.H. ; Li, J.M. ; Lim, K.G. ; Chong, T.C.

Author_Institution

Data Storage Inst., A*STAR (Agency for Sci., Technol. & Res.), Singapore, Singapore

fYear

2010

fDate

16-19 May 2010

Firstpage

1

Lastpage

2

Abstract

A multi-layer lateral PCM with N-doped Sb70Te30 was proposed and demonstrated. Both current sweep and pulse mode dynamic resistance test show that multi states exist in the device, which can be used for multi-level data storage. Simulation shows the working mechanism of multi-level and confirms the experiment results. More intermediate states can be realized by increasing the cycles of N-doped Sb70Te30 and ZnSSi02 deposited and by using different film thickness, which will be a promising solution to increase the data storage capacity for PCM largely.

Keywords

memory architecture; phase change memories; current sweep; data storage capacity; multilayer lateral PCM; multilevel data storage; multilevel lateral phase change memory; pulse mode dynamic resistance test; super-lattice like structure; Amorphous materials; Bridge circuits; Crystallization; Data engineering; Material storage; Phase change materials; Phase change memory; Space vector pulse width modulation; Temperature distribution; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Memory Workshop (IMW), 2010 IEEE International

Conference_Location

Seoul

Print_ISBN

978-1-4244-6719-8

Electronic_ISBN

978-1-4244-7668-8

Type

conf

DOI

10.1109/IMW.2010.5488400

Filename

5488400