Characteristics of staggered InGaN quantum wells light-emitting diodes emitting at 480–525 nm

Author

Zhao, Hongping ; Huang, G.S. ; Liu, Guangyu ; Li, Xiaohang ; Poplawsky, Jonathan D. ; Penn, S. Tafon ; Dierolf, Volkmar ; Tansu, Nelson

Author_Institution

Dept. of Electr. & Comput. Eng., Lehigh Univ., Bethlehem, PA, USA

fYear

2009

fDate

22-24 June 2009

Firstpage

221

Lastpage

222

Abstract

In this work, we present simulation and experimental studies of staggered InGaN QWs LEDs emitting at 480nm and 525-nm spectral regimes. The staggered InGaN QW design can be realized by employing combination of high In-content and low In-content InGaN layers to form the QW with significantly improved electron-hole wave function overlap. This leads to the enhancement in radiative efficiency of nitride LEDs.The power-dependent cathodoluminescence measurements exhibited enhancement of 2.5-times for staggered InGaN QWs. The electroluminescence output power for electrically-injected staggered InGaN QW LEDs exhibited improvement by 2.5-3.5 times for emission in the green spectal regime.

Keywords

III-V semiconductors; cathodoluminescence; electroluminescence; gallium compounds; indium compounds; light emitting diodes; semiconductor quantum wells; wide band gap semiconductors; InGaN; cathodoluminescence; electroluminescence; electron-hole wave function overlap; green spectal regime; quantum wells light-emitting diodes; radiative efficiency; wavelength 480 nm to 525 nm; Current density; Light emitting diodes; Power generation; Power measurement; Quantum computing; Radiative recombination; Stimulated emission; Temperature; Wave functions; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Device Research Conference, 2009. DRC 2009

Conference_Location

University Park, PA

Print_ISBN

978-1-4244-3528-9

Electronic_ISBN

978-1-4244-3527-2

Type

conf

DOI

10.1109/DRC.2009.5354899

Filename

5354899