DocumentCode
2693536
Title
Performance limitations of graphene nanoribbon tunneling FETS due to line edge roughness
Author
Luisier, Mathieu ; Klimeck, Gerhard
Author_Institution
Network for Comput. Nanotechnol., Purdue Univ., West Lafayette, IN, USA
fYear
2009
fDate
22-24 June 2009
Firstpage
201
Lastpage
202
Abstract
A strong deterioration of the performances of GNR TFETs due to LER and the induced source-todrain tunneling leakage is predicted. LER is identified as a crucial design consideration for GNR TFETs that will play an even more important role in ribbons with wqnr <5 nm. An extension of the device gate length beyond lOOnm, in contradiction to the ITRS predictions, would attenuate the effect of LER on the OFF-current level.
Keywords
field effect transistors; graphene; tunnel transistors; graphene nanoribbon tunneling FETS; line edge roughness; source-to-drain tunneling leakage; Atomic layer deposition; Computer networks; Electronic mail; FETs; Intelligent networks; Nanotechnology; PIN photodiodes; Photonic band gap; Tunneling; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Device Research Conference, 2009. DRC 2009
Conference_Location
University Park, PA
Print_ISBN
978-1-4244-3528-9
Electronic_ISBN
978-1-4244-3527-2
Type
conf
DOI
10.1109/DRC.2009.5354951
Filename
5354951
Link To Document