DocumentCode
2693895
Title
Residual stress analysis in thin membranes obtained by boron diffusion processes
Author
Manea, Elena ; Cernica, Ileana ; Dolocan, Voicu ; Muller, Raluca
Author_Institution
Nat. Inst. for Res. & Dev. in Microtechnol., Bucharest, Romania
Volume
2
fYear
2000
fDate
2000
Firstpage
471
Abstract
In this paper we analyze the stress induced in thin membranes (5-10 μm), obtained by wet etching after thermal diffusion from boron solid source. Using a new solution we reveal defects and analyze the chemical mechanism and the causes of their appearance. We proved that the residual stress could be changed, from tensile to compressive modeling post diffusion processes. Finally, we correlate the kind of defects with the stress effect
Keywords
boron; elemental semiconductors; internal stresses; membranes; semiconductor doping; silicon; stress analysis; surface diffusion; B diffusion; Si:B; chemical mechanism; residual stress analysis; thin membranes; wet etching; Biomembranes; Boron; Chemical analysis; Compressive stress; Diffusion processes; Residual stresses; Solids; Tensile stress; Thermal stresses; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-5885-6
Type
conf
DOI
10.1109/SMICND.2000.889134
Filename
889134
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