DocumentCode
2693950
Title
Uniaxial silicon piezoresistive accelerometer
Author
Pavelescu, Loan ; Matei, Paula
Author_Institution
Nat. Inst., Bucharest, Romania
Volume
2
fYear
2000
fDate
2000
Firstpage
479
Abstract
This work presents the theory and experimental studies for a silicon cantilever accelerometer with freestanding inertial mass. Such structure was 3D configured by anisotropic silicon etching on the both sides of the chip. The relative change of piezoresistance and the expression for sensitivity have been deduced. An analyse with finite element method based on ANSYS software was performed. Some elements about dynamical comportment are presented. Finally, the technological and experimental results are discussed
Keywords
accelerometers; elemental semiconductors; etching; finite element analysis; micromachining; microsensors; piezoresistive devices; silicon; 3D structure; ANSYS program; Si; anisotropic etching; finite element analysis; free-standing inertial mass; piezoresistance; sensitivity; uniaxial silicon piezoresistive cantilever accelerometer; Accelerometers; Anisotropic magnetoresistance; Bridges; Equations; Etching; Finite element methods; Particle beams; Piezoresistance; Silicon; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2000. CAS 2000 Proceedings. International
Conference_Location
Sinaia
Print_ISBN
0-7803-5885-6
Type
conf
DOI
10.1109/SMICND.2000.889136
Filename
889136
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