• DocumentCode
    2693954
  • Title

    Long Term Stability of DROs Compared to Crystal Oscillators

  • Author

    Varian, K.R.

  • Volume
    2
  • fYear
    1987
  • fDate
    May 9 1975-June 11 1987
  • Firstpage
    583
  • Lastpage
    586
  • Abstract
    Guidelines are presented for GaAs FET DRO´s which when followed result in the DRO´s long term drift characteristics being similar to crystal oscillators. The guidelines fall into three categories: electrical stresses in the FET, fabrication issues of the DRO, and processing of the FET (a screening test for the GaAs FETs is described). Experimental data is included on a sample of units that support the proposed guidelines.
  • Keywords
    Crystals; FETs; Fabrication; Frequency; Gallium arsenide; Guidelines; Oscillators; Stability; Stress; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1987 IEEE MTT-S International
  • Conference_Location
    Palo Alto, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1987.1132477
  • Filename
    1132477
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2693954