DocumentCode
2693980
Title
Low Phase Noise X/Ku-Band VCO
Author
Boyd, D.A.
Volume
2
fYear
1987
fDate
May 9 1975-June 11 1987
Firstpage
587
Lastpage
590
Abstract
A balanced, thin-film VCO utilizing silicon bipolar transistors and hyper-abrupt varactor diodes has yielded 40% tuning bandwidth while demonstrating excellent frequency stability. Key features of this design are: High RF output power, linear tuning characteristics, excellent sub-harmonic rejection, and low single sideband phase noise. At an operating frequency of 11.5 GHz, single sideband phase noise of -104 dBc/Hz at 100 KHz offset has been obtained. An X-band VCO subsystem designed for missile LO applications utilizing the developed oscillator is also presented.
Keywords
Bipolar transistors; Diodes; Frequency; Phase noise; Semiconductor thin films; Silicon; Thin film transistors; Tuning; Varactors; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location
Palo Alto, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1987.1132478
Filename
1132478
Link To Document