Novel design structure for a dual-drain MOSFET magnetic sensor integrated in SOI

Author

Avram, Marioara ; Codreanu, Catalin ; Ravariu, C.

Author_Institution

Nat. Inst. of Res. & Dev. for Microtechnol., Bucharest, Romania

Volume

2

fYear

2000

fDate

2000

Firstpage

491

Abstract

A new MOS magneto-transistor design structure is proposed. The device is intended to be fabricated in SOI-MOSFET technology and has a geometry design based on the traditional concept of dual-drain MOS magneto-transistor. In the present SOI-MOSFET variant, this configuration consists in symmetrically placing the source between gates and drains. To prevent the floating-body effect in SOI structure, a backside gate positively biased is used. Doping levels were chosen from SUPREM technology program simulations and dimensions are chosen to agree with the actually given technology in which this device could be fabricated. The device structure was simulated with PISCES program and the simulation results regarding device performance were compared with some experimental data for similar devices reported in literature

Keywords

MOSFET; magnetic sensors; microsensors; silicon-on-insulator; MOS magneto-transistor; PISCES; SOI technology; SUPREM; dual-drain MOSFET magnetic sensor; floating body effect; numerical simulation; Conductivity; Geometry; Leakage current; MOSFET circuits; Magnetic devices; Magnetic fields; Magnetic materials; Magnetic sensors; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2000. CAS 2000 Proceedings. International

Conference_Location

Sinaia

Print_ISBN

0-7803-5885-6

Type

conf

DOI

10.1109/SMICND.2000.889139

Filename

889139