DocumentCode
2694000
Title
Microwave Resistance of Gallium Arsenide and Silicon P-I-N Diodes
Author
Caverly, R.H. ; Hiller, G.
Volume
2
fYear
1987
fDate
May 9 1975-June 11 1987
Firstpage
591
Lastpage
594
Abstract
The purpose of this paper is to demonstrate that the p-i-n diode resistance is definable as a function of frequency and depends on the diode geometry and electronic properties. A formula for the p-i-n diode resistance is presented and compared with experimental resistance versus frequency data for both silicon and gallium arsenide p-i-n diodes.
Keywords
Charge carrier lifetime; Electric resistance; Equations; Gallium arsenide; Geometry; P-i-n diodes; Radio frequency; Semiconductor diodes; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1987 IEEE MTT-S International
Conference_Location
Palo Alto, CA, USA
ISSN
0149-645X
Type
conf
DOI
10.1109/MWSYM.1987.1132479
Filename
1132479
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