• DocumentCode
    2695690
  • Title

    A Four Stage V-Band MOCVD HEMT Amplifier

  • Author

    Yau, W. ; Watkins, E.T. ; Wang, S.K. ; Wang, K. ; Klatskin, B.

  • Volume
    2
  • fYear
    1987
  • fDate
    May 9 1975-June 11 1987
  • Firstpage
    1015
  • Lastpage
    1018
  • Abstract
    V-band multi-stage Low Noise Amplifiers (LNA) were developed utilizing MOCVD High Electron Mobility Transistors (HEMTs). The amplifiers have demonstrated 16.57 dB gain with an associated noise figure of 5.65 dB and over 19 dB gain with 7.91 dB noise figure at 60.4 GHz. Another amplifier achieved over 5GHz bandwidth with greater than 14dB gain. The amplifier is integrated in a single housing that is 1.75 inch long.
  • Keywords
    Equivalent circuits; Frequency; Gallium arsenide; HEMTs; MOCVD; Millimeter wave technology; Noise figure; Performance gain; Probes; Radiofrequency amplifiers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1987 IEEE MTT-S International
  • Conference_Location
    Palo Alto, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1987.1132596
  • Filename
    1132596
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2695690