• DocumentCode
    2695724
  • Title

    Reliability of Super Low Noise HEMTs

  • Author

    Hayashi, K. ; Sonoda, T. ; Yamaguchi, T. ; Nagahamar, K. ; Yamanouchi, M. ; Takamiya, S. ; Mitsui, S.

  • Volume
    2
  • fYear
    1987
  • fDate
    May 9 1975-June 11 1987
  • Firstpage
    1023
  • Lastpage
    1026
  • Abstract
    The first report on a comprehensive study of the reliability of super low noise HEMTs with a typical noise figure of 1.2 dB at 12GHz is presented. No failure was observed in both DC running and high temperature storage tests during 2000 hours. These successful results were achieved by a newly developed low temperature ohmic sintering technology and a novel Ni/Al gate.
  • Keywords
    Gallium arsenide; HEMTs; Large scale integration; Life testing; MODFETs; Molecular beam epitaxial growth; Noise figure; Noise measurement; Packaging; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1987 IEEE MTT-S International
  • Conference_Location
    Palo Alto, CA, USA
  • ISSN
    0149-645X
  • Type

    conf

  • DOI
    10.1109/MWSYM.1987.1132598
  • Filename
    1132598
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2695724