Dual-Wavelength Master Oscillator Power Amplifier Diode-Laser System at 785 nm

Author

Maiwald, Martin ; Klehr, Andreas ; Sumpf, Bernd ; Erbert, GoÌˆtz ; Trankle, Gunther

Author_Institution

Ferdinand-Braun-Inst., Leibniz-Inst. fur Hochstfrequenztechnik, Berlin, Germany

Volume

26

Issue

11

fYear

2014

fDate

1-Jun-14

Firstpage

1120

Lastpage

1123

Abstract

A dual-wavelength master oscillator (MO) power amplifier (PA) diode-laser system emitting at 785 nm suitable for shifted excitation Raman difference spectroscopy is presented. The laser system consists of a distributed Bragg reflector V-branch diode laser as a dual-wavelength MO and a ridge waveguide PA. The system reaches an optical output power of more than 750 mW at 25 °C. Optical spectra show wavelength stabilized single mode emission at 784.60 and 785.22 nm over the whole power range with a spectral width ≤10 pm (≤0.5 cm^-1) and a spectral distance of 0.62 nm (≤10.1 cm ^-1).

Keywords

Raman spectra; distributed Bragg reflector lasers; laser beams; power amplifiers; ridge waveguides; semiconductor optical amplifiers; V-branch diode laser; distributed Bragg reflector; dual-wavelength master oscillator power amplifier diode-laser system; optical output power; optical spectra; ridge waveguide power amplifier; shifted excitation Raman difference spectroscopy; single mode emission; spectral distance; spectral width; temperature 25 degC; wavelength 784.60 nm to 785.22 nm; Diode lasers; Distributed Bragg reflectors; Laser excitation; Measurement by laser beam; Optical amplifiers; Semiconductor lasers; Stimulated emission; 785 nm; DBR; Diode lasers; Raman spectroscopy; SERDS; Y-branch; semiconductor lasers; shifted excitation Raman difference spectroscopy;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2014.2314140

Filename

6781634