Research on III-V compound semiconductor based optoelectronic devices

Author

Luo, Y. ; Sun, C. ; Hao, Z. ; Han, Y. ; Xiong, B. ; Guo, W. ; Wu, T.

Author_Institution

Dept. of Electron. Eng., Tsinghua Univ., Beijing, China

fYear

2003

fDate

12-14 Sept. 2003

Firstpage

11

Lastpage

14

Abstract

In this talk, we shall present research activities on compound semiconductor based optoelectronic devices in State Key Lab on Integrated Optoelectronics, Tsinghua University. The presentation will cover high-speed electroabsorption (EA) modulator integrated distributed feedback (DFB) lasers for trunk line fiber communications, growth of InAsP/InGaAsP multiple-quantum-well (MQW) structures by all-solid-source molecular beam epitaxy (SSMBE) system, and the work on GaN based blue light emitting devices.

Keywords

III-V semiconductors; arsenic compounds; distributed feedback lasers; electroabsorption; gallium compounds; indium compounds; integrated optics; integrated optoelectronics; light emitting diodes; molecular beam epitaxial growth; optical communication equipment; optical fibre communication; optical modulation; quantum well lasers; semiconductor quantum wells; wide band gap semiconductors; GaN; GaN based blue light emitting devices; III-V compound semiconductor based optoelectronic devices; InAsP-InGaAsP; InAsP/InGaAsP multiple-quantum-well structures; MQW; State Key Lab on Integrated Optoelectronics; Tsinghua University; all-solid-source molecular beam epitaxy system; high-speed electroabsorption modulator integrated distributed feedback lasers; trunk line fiber communications; Distributed feedback devices; Fiber lasers; III-V semiconductor materials; Integrated optoelectronics; Laser feedback; Optical fiber communication; Optical modulation; Optoelectronic devices; Quantum well devices; Semiconductor lasers;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics, Proceedings of the Sixth Chinese Symposium

Print_ISBN

0-7803-7887-3

Type

conf

DOI

10.1109/COS.2003.1278153

Filename

1278153