DocumentCode
2696612
Title
Product NBTI Distribution and Voltage Dependence - impact of relaxation and droops
Author
Haggag, Amr ; Liu, Ning ; Abramowitz, Peter ; Moosa, Mohamed ; Anderson, Gary ; Burnett, David ; Parihar, Sanjay ; Abeln, Glenn ; Higman, Jack
Author_Institution
Freescale Semicond., Austin, TX, USA
fYear
2010
fDate
2-6 May 2010
Firstpage
1115
Lastpage
1116
Abstract
The impact of relaxation and droops in determining the voltage dependence of NBTI during product stressing is discussed. This has implications on the Fmax and Vmin guardbands extrapolated from product stress to use conditions. Voltage dependence for the shift of the 3sigma tail bits in both new and old technology nodes are compared to illustrate the importance of relaxation and droops.
Keywords
CMOS integrated circuits; SRAM chips; dielectric relaxation; stress relaxation; CMOS gate dielectric scaling; Fmax guard band; SRAM arrays; Vmin guard bands; droops; product NBTI distribution; product stressing; relaxation; voltage dependence; CMOS technology; Lifting equipment; Niobium compounds; Performance analysis; Probability distribution; Random access memory; Stress; Tail; Titanium compounds; Voltage; NBTI; distribution; product; relaxation;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-5430-3
Type
conf
DOI
10.1109/IRPS.2010.5488662
Filename
5488662
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