• DocumentCode
    269733
  • Title

    Non-linear coefficient of BaTiO3-doped ZnO varistor

  • Author

    Kharchouche, Fayçal ; Belkhiat, Saâd ; Belkhiat, Djamel Eddine Chouaib

  • Author_Institution
    Dept. d´Electrotech., Univ. Setif I, Sétif, Algeria
  • Volume
    7
  • Issue
    6
  • fYear
    2013
  • fDate
    Nov. 2013
  • Firstpage
    326
  • Lastpage
    333
  • Abstract
    The effect of additions up to 9.6%wt BaTiO3 on grain growth and microstructure in ZnO samples sintered at 1300°C has been studied using scanning electron microscopy, energy dispersive X-ray, X-ray diffraction and impedance analyser as techniques. The sample doped with 1.6%wt BaTiO3, leads to grain size increasing and forms (BaO10.89Ti3.93Zn2.03 and Ba4O27Ti11Zn) solid solutions with ZnO. A homogeneous structure was obtained whereas with further additions 3%wt the structure was inhomogeneous and the solid solutions formed in the first segregate to grain boundaries. Afterwards, an excess of 9.6%wt BaTiO3 leads to BaTiO3 phase segregation locating on the surface of the sample and in the grain boundaries near the junctions between matrix grains. Experimental I-V current-voltage characteristics show that BaTiO3 as additive in ZnO varistors, increases the non-linear coefficient (α) and the breakdown voltage. The highest non-linearity was obtained for 9.6%wt BaTiO3 content with α = 121.03 and 1.79 μA in leakage current. The average breakdown voltage per grain boundary (Vgb) was evaluated in the ranges 1.7-3.46 V/gb and 1.34-2.54 V/gb in agreement with the literature.
  • Keywords
    II-VI semiconductors; X-ray chemical analysis; X-ray diffraction; barium compounds; electric breakdown; grain boundary segregation; grain growth; grain size; leakage currents; scanning electron microscopy; solid solutions; varistors; wide band gap semiconductors; zinc compounds; BaTiO3-doped ZnO varistor; X-ray diffraction; ZnO:BaTiO3; breakdown voltage; current-voltage characteristics; energy dispersive X-ray techniques; grain boundaries; grain growth; grain size; homogeneous structure; impedance analyser; microstructure; nonlinear coefficient; phase segregation; scanning electron microscopy; solid solutions; temperature 1300 degC;
  • fLanguage
    English
  • Journal_Title
    Science, Measurement & Technology, IET
  • Publisher
    iet
  • ISSN
    1751-8822
  • Type

    jour

  • DOI
    10.1049/iet-smt.2012.0022
  • Filename
    6650286