Doped RGB organic electroluminescent devices based on a bipolar host material

Author

Wen, Shin-Wen ; Yen, Chia-Kuo ; Liu, Tswen-Hsin ; Chen, Chin H.

Author_Institution

Dept. of Appl. Chem., Nat. Chiao Tung Univ., Hsinchu, Taiwan

fYear

2003

fDate

12-14 Sept. 2003

Firstpage

263

Lastpage

265

Abstract

Development of RGB doped emitters based on the bipolar host of wide bandgap material, 9,10-bis(2-naphthyl)anthracene (ADN) is described. While the blue and green fluorescent dopants of TBP and C-545T achieved EL efficiencies of 5.1 and 11.2 cd/A, respectively in ADN, the red fluorescent DCJTB dopant needed to be doped in a co-hosted mixture of ADN: AIq3 (60:40) in order to achieve a high efficiency of 4.8 cd/A with a near saturated CIE_xy = 0.64, 0.35 at 2 % doping. Luminance efficiencies of all three RGB doped emitters in the bipolar ADN based host are not affected by increased drive current density, thus solving the current-induced fluorescence quenching problem often encountered in organic EL devices.

Keywords

electroluminescence; electroluminescent devices; organic light emitting diodes; organic semiconductors; semiconductor doping; wide band gap semiconductors; 9,10-bis(2-naphthyl)anthracene; ADN; C-545T; DCJTB dopant; EL efficiencies; RGB doped emitters; RGB organic electroluminescent devices; TBP; bipolar host material; fluorescent dopants; luminance efficiencies; Electroluminescent devices; Flat panel displays; Fluorescence; Glass; Indium tin oxide; Organic light emitting diodes; Organic materials; Photonic band gap; Plasma devices; Plasma properties;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronics, Proceedings of the Sixth Chinese Symposium

Print_ISBN

0-7803-7887-3

Type

conf

DOI

10.1109/COS.2003.1278219

Filename

1278219