Time dependent dielectric breakdown and stress induced leakage current characteristics of 8Å EOT HfO2 N-MOSFETS

Author

O´Connor, R. ; Hughes, Greg ; Kauerauf, Thomas ; Ragnarsson, Lars-Åke

Author_Institution

Sch. of the Phys. Sci., Dublin City Univ., Dublin, Ireland

fYear

2010

fDate

2-6 May 2010

Firstpage

799

Lastpage

803

Abstract

In this work we present the time dependent dielectric breakdown (TDDB) characteristics of LaO capped HfO₂ layers with an equivalent oxide thickness of 8Å̊. The layers show maximum operating voltages in excess of 1 V. Such high reliability can be attributed to very high Weibull slopes. We examine the origin of the high slopes by a detailed study of the evolution of the stress induced leakage current with time, temperature and stress voltage.

Keywords

CMOS integrated circuits; MOSFET; hafnium compounds; high-k dielectric thin films; integrated circuit reliability; lanthanum compounds; leakage currents; semiconductor device breakdown; semiconductor device reliability; CMOS reliability; EOT HfO₂ N-MOSFET; HfO₂; LaO; Weibull slopes; equivalent oxide thickness; high-k dielectric; stress induced leakage current characteristics; stress voltage; time dependent dielectric breakdown; Dielectric breakdown; Dielectric substrates; Electric breakdown; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Leakage current; Silicon germanium; Stress; Voltage; CMOS reliability; Hafnium oxide; High-k dielectric; stress induced leakage current; time dependent dielectric breakdown;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488730

Filename

5488730