Prediction of NBTI degradation for circuit under AC operation

Author

Tsai, Y.S. ; Jha, N.K. ; Lee, Y. -H ; Ranjan, R. ; Wang, Wayne ; Shih, J.R. ; Chen, M.J. ; Lee, J.H. ; Wu, K.

Author_Institution

Technol. Q&R Div., TSMC, Hsinchu, Taiwan

fYear

2010

fDate

2-6 May 2010

Firstpage

665

Lastpage

669

Abstract

A model predicting the negative bias temperature instability (NBTI) reliability of high performance nitrided oxides is developed from discrete p-type metal-oxide-semiconductor field effect transistor (PMOSFET) data and verified with ring oscillator degradation in various frequencies for up to 1 GHz. Based on the experimental data and the simulation results, hole traps generation is considered to be major factor for AC NBTI degradation. An AC/DC NBTI improvement factor of around 10 has been observed at low frequency of 0.01 Hz while it is significantly larger (~10000) at 1 GHz frequency range. It is established that the measurement techniques are very crucial for accurate NBTI reliability estimation.

Keywords

MOSFET; hole traps; oscillators; semiconductor device reliability; AC NBTI degradation prediction; NBTI reliability estimation; PMOSFET data; frequency 0.01 Hz; frequency 1 GHz; high performance nitrided oxides; hole traps generation; measurement techniques; negative bias temperature instability reliability; p-type metal-oxide-semiconductor field effect transistor; ring oscillator; AC generators; Degradation; FETs; Frequency; MOSFET circuits; Negative bias temperature instability; Niobium compounds; Predictive models; Ring oscillators; Titanium compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488752

Filename

5488752