• DocumentCode
    2698716
  • Title

    Unifying model for step coverage in deposition processes for multilevel interconnection

  • Author

    Raupp, Gregory B. ; Cale, Timothy S.

  • Author_Institution
    Dept. of Chem., Bio & Mater. Eng., Arizona State Univ., Tempe, AZ, USA
  • fYear
    1990
  • fDate
    12-13 Jun 1990
  • Firstpage
    212
  • Lastpage
    218
  • Abstract
    A molecular transport-reaction model based on a pseudosteady approximation of the Boltzmann equation provides a unifying understanding of step coverage phenomena observed for the spectrum of deposition processes. The model suggests that for all chemically based processes, the reactivity of precursors or intermediates, as characterized by their reactive sticking coefficients, controls step coverage. Classical reaction rate expressions may be used to estimate reactive sticking coefficient dependences on flux; these dependences are directly incorporated in the model to determine the spatial and temporal evolution of the sticking coefficients as the feature fill proceeds. For all but first-order reactions, use of a single value for the sticking coefficient is not warranted. The model is formulated in such a way that physical properties of the films (i.e. density) can be estimated if the property dependence on precursor incident angle is known
  • Keywords
    Boltzmann equation; chemical vapour deposition; insulating thin films; metallisation; Boltzmann equation; deposition processes; feature fill; molecular transport-reaction model; multilevel interconnection; precursor incident angle; precursors; pseudosteady approximation; reactive sticking coefficients; reactivity; step coverage; temporal evolution; Boltzmann equation; Chemical engineering; Chemical processes; Chemical vapor deposition; Optical films; Plasma chemistry; Plasma temperature; Semiconductor device modeling; Silicon compounds; Solid modeling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Multilevel Interconnection Conference, 1990. Proceedings., Seventh International IEEE
  • Conference_Location
    Santa Clara, CA
  • Type

    conf

  • DOI
    10.1109/VMIC.1990.127868
  • Filename
    127868