DocumentCode
2698888
Title
Trench isolation technology
Author
Pogge, H. Bernhard
Author_Institution
IBM Gen. Technol. Div., Hopewell Junction, NY, USA
fYear
1990
fDate
17-18 Sep 1990
Firstpage
18
Lastpage
25
Abstract
The process technologies associated with fabricating trench isolation are discussed along with current process and device concerns. Potential development directions required for further refinements and diversification to satisfy future device designs are also considered. The following process elements are examined: trench formation, trench linear formation, trench filling, and surface replanarization
Keywords
bipolar integrated circuits; integrated circuit technology; oxidation; bipolar circuits; device designs; oxidation parameters; process technologies; surface replanarization; trench filling; trench formation; trench isolation technology; trench linear formation; Chemical elements; Chemical technology; Computational geometry; Dry etching; Integrated circuit technology; Isolation technology; Lithography; Manufacturing; Planarization; Potential well;
fLanguage
English
Publisher
ieee
Conference_Titel
Bipolar Circuits and Technology Meeting, 1990., Proceedings of the 1990
Conference_Location
Minneapolis, MN
Type
conf
DOI
10.1109/BIPOL.1990.171117
Filename
171117
Link To Document