Effect of interface roughness and morphology on the electrical behaviour of Au/n-GaAs Schottky diodes

Author

Horváth, Zs J. ; Rengevich, O.V. ; Mamykin, S.V. ; Dmitruk, N.L. ; Van Tuyen, Vo ; Szentpáli, B. ; Konakova, R.V. ; Belyaev, A.E.

Author_Institution

Res. Inst. for Tech. Phys. & Mater. Sci., Hungarian Acad. of Sci., Budapest, Hungary

fYear

2000

fDate

2000

Firstpage

257

Lastpage

259

Abstract

The effect of the interface roughness and morphology (flat, dendrite-like and quasi-grating) on the electrical behaviour of Au/n-GaAs Schottky diodes were studied by current-voltage measurements. The results suggested that diodes with a dendrite-like interface consist of two phases with different barrier heights, while the current flow through diodes with a quasi-grating interface were dominated by tunneling. Both types of diodes with rough interface exhibited excess currents at low temperatures

Keywords

III-V semiconductors; Schottky diodes; gallium arsenide; gold; interface roughness; semiconductor-metal boundaries; tunnel diodes; Au-GaAs; Schottky diodes; barrier height; current-voltage measurements; dendrite-like interface; excess currents; interface morphology; interface roughness; quasi-grating interface; tunneling; Electric variables measurement; Etching; Gold; Gratings; Morphology; Physics; Schottky diodes; Semiconductor diodes; Temperature; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Conference_Location

Smolenice

Print_ISBN

0-7803-5939-9

Type

conf

DOI

10.1109/ASDAM.2000.889495

Filename

889495