DocumentCode
2699197
Title
Impact of charge trapping on the voltage acceleration of TDDB in metal gate/high-k n-channel MOSFETs
Author
Kerber, A. ; Vayshenker, A. ; Lipp, D. ; Nigam, T. ; Cartier, E.
Author_Institution
GLOBALFOUNDRIES Inc., Yorktown Heights, NY, USA
fYear
2010
fDate
2-6 May 2010
Firstpage
369
Lastpage
372
Abstract
The root cause for the increase in the TDDB voltage acceleration with decreasing stress voltage in metal gate/high-k n-channel FETs is investigated. Using DC and AC stress methodologies, the effect could be linked to charge trapping in the high-k gate dielectric. Furthermore, a correction for charge trapping is proposed, which results in a single power law voltage dependence for all stress conditions.
Keywords
MOSFET; electric breakdown; high-k dielectric thin films; semiconductor device reliability; AC stress methodology; DC stress methodology; TDDB voltage acceleration; charge trapping correction; high-k gate dielectric; metal gate-high-k n-channel MOSFET; single power law voltage dependence; stress voltage; time-dependent dielectric breakdown; Acceleration; High K dielectric materials; High-K gate dielectrics; MOSFETs; Voltage; SILC; TDDB; high-k dielectrics; metal gate; oxygen vacancies;
fLanguage
English
Publisher
ieee
Conference_Titel
Reliability Physics Symposium (IRPS), 2010 IEEE International
Conference_Location
Anaheim, CA
ISSN
1541-7026
Print_ISBN
978-1-4244-5430-3
Type
conf
DOI
10.1109/IRPS.2010.5488803
Filename
5488803
Link To Document