Alpha-particle-induced soft errors and multiple cell upsets in 65-nm 10T subthreshold SRAM

Author

Fuketa, Hiroshi ; Hashimoto, Masanori ; Mitsuyama, Yukio ; Onoye, Takao

Author_Institution

Dept. Inf. Syst. Eng., Osaka Univ., Suita, Japan

fYear

2010

fDate

2-6 May 2010

Firstpage

213

Lastpage

217

Abstract

This paper presents measurement results of alpha-particle-induced soft errors and multiple cell upsets (MCUs) in 65-nm 10 T SRAM with a wide range of supply voltage from 1.0 V to 0.3 V. We reveal that the soft error rate (SER) at 0.3 V is eight times higher than SER at 1.0 V, and the ratio of MCUs to the total upsets increases as the supply voltage decreases. The SER and ratio of MCUs with body-biasing are also described. In addition, we investigate an impact of manufacturing variability on the soft error immunity of each memory cell. In our measurement, a distinct influence of manufacturing variability is not observed even in subthreshold region.

Keywords

SRAM chips; alpha-particle-induced soft error rate; body biasing; manufacturing variability; memory cell; multiple cell upsets; size 65 nm; storage capacity 10 Tbit; subthreshold SRAM; voltage 1.0 V to 0.3 V; Circuits; Error analysis; Error correction; Error correction codes; Information systems; Manufacturing; Performance evaluation; Random access memory; Systems engineering and theory; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Reliability Physics Symposium (IRPS), 2010 IEEE International

Conference_Location

Anaheim, CA

ISSN

1541-7026

Print_ISBN

978-1-4244-5430-3

Type

conf

DOI

10.1109/IRPS.2010.5488826

Filename

5488826