DocumentCode
2699727
Title
A single-layer metal-electrode CCD image sensor
Author
Nakamura, N. ; Tanaka, N. ; Endoh, N. ; Matsunaga, Y. ; Sasaki, M. ; Yamashita, Hiromasa ; Ohsawa, S. ; Manabe, S. ; Yoshida, O.
Author_Institution
Res. & Dev. Center, Toshiba Corp., Kawasaki, Japan
fYear
1995
fDate
15-17 Feb. 1995
Firstpage
222
Lastpage
223
Abstract
A small pixel is required to reduce CCD image sensor chip size for commercial application. However, the shrinkage of pixel size adversely affects such characteristics as smear noise, sensitivity and charge-handling capability. Furthermore, a conventional overlapping double-layer polysilicon (polySi) electrode is complicated and difficult to fabricate for CCD image sensors. For process step simplicity of the transfer electrodes, aiming at low cost sensors and the smear noise reduction, a single-layer metal-electrode CCD image sensor is introduced.
Keywords
CCD image sensors; semiconductor device noise; sensitivity; CCD image sensor; charge-handling capability; chip size; pixel size; sensitivity; single-layer metal-electrode CCD; smear noise; transfer electrodes; Boron; Charge coupled devices; Charge-coupled image sensors; Electrodes; Implants; Insulation; Ion implantation; Silicides; Tungsten; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State Circuits Conference, 1995. Digest of Technical Papers. 41st ISSCC, 1995 IEEE International
Conference_Location
San Francisco, CA, USA
ISSN
0193-6530
Print_ISBN
0-7803-2495-1
Type
conf
DOI
10.1109/ISSCC.1995.535531
Filename
535531
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