Transversal photovoltage in heterostructure and Schottky contact

Author

Shekhovtsov, L.V.

Author_Institution

Inst. of Semicond. Phys., Acad. of Sci., Kiev, Ukraine

fYear

2000

fDate

2000

Firstpage

437

Lastpage

440

Abstract

We have investigated the transverse photovoltage generated in semiconductor heterostructures by a modulated illumination. A complicated form of the photovoltage spectral curves for the Ge-GaAs heterostructure and NbN-GaAs Schottky contact is determined by the interaction between photocurrents flowing in the bulk and near interfaces. An additional unmodulated illumination of the samples changes the interaction between the photocurrents. This leads to modification of the photovoltage spectral curves. An analysis of their features enables one to obtain the characteristics of the interface uniformity in composite semiconductor structures

Keywords

III-V semiconductors; Schottky barriers; elemental semiconductors; gallium arsenide; germanium; niobium compounds; photovoltaic effects; semiconductor heterojunctions; Ge-GaAs; NbN-GaAs; Schottky contact; semiconductor heterostructure; transversal photovoltage; Absorption; Conductivity; Gallium arsenide; Lighting; Optical modulation; Schottky barriers; Semiconductor films; Substrates; Voltage; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Advanced Semiconductor Devices and Microsystems, 2000. ASDAM 2000. The Third International EuroConference on

Conference_Location

Smolenice

Print_ISBN

0-7803-5939-9

Type

conf

DOI

10.1109/ASDAM.2000.889539

Filename

889539