Localized SOI logic and bulk I/O devices co-integration for Low power System-on-Chip technology

Author

Huguenin, J.-L. ; Monfray, S. ; Denorme, S. ; Bidal, G. ; Perreau, P. ; Barnola, S. ; Samson, M.-P. ; Benotmane, K. ; Loubet, N. ; Campidelli, Y. ; Leverd, F. ; Abbate, F. ; Clement, L. ; Borowiak, C. ; Golanski, Dominique ; Fenouillet-Beranger, C. ; Boeu

Author_Institution

STMicroelectronics, Crolles, France

fYear

2010

fDate

26-28 April 2010

Firstpage

118

Lastpage

119

Abstract

The objective of this paper is to present the successful co-integration of Logic Ultra-Thin Body and Box (UTBB) devices and bulk-Si I/O devices on the same chip. The UTBB transistors are integrated locally on a Bulk wafer with the Localized Silicon On Insulator (LSOI) process technology with HfO₂/TiN gate stack for low power applications. I/O co-integrated Bulk devices have a thicker interfacial SiO₂ under the HfO₂/TiN stack to be compatible with the I/O higher voltage. Both performances of logic UTBB and I/O bulk devices are presented.

Keywords

logic circuits; low-power electronics; silicon-on-insulator; system-on-chip; HfO₂-TiN; I/O co-integrated bulk devices; SiO₂; bulk I/O devices co-integration; bulk wafer; localized silicon on insulator logic; logic ultra-thin body and box transistors; low power application; low power system-on-chip technology; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Logic devices; MOS devices; Power systems; Random access memory; Silicon on insulator technology; Tin; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-5063-3

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2010.5488924

Filename

5488924