• DocumentCode
    2701373
  • Title

    Electrically-injected, spin-polarized, quantum well vertical-cavity surface-emitting lasers

  • Author

    Holub, M. ; Shin, J. ; Chakrabarti, S. ; Bhattacharya, P.

  • Author_Institution
    Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI
  • Volume
    1
  • fYear
    2005
  • fDate
    22-22 June 2005
  • Firstpage
    213
  • Lastpage
    214
  • Abstract
    In summary, the authors have demonstrated controlled switching between left- and right- elliptically polarized modes in a VCSEL using a ferromagnetic semiconductor to align hole spins. The experiment proves that the concept of spin injection applies equally well for semiconductor lasers as it does for LEDs. Spin transport occurs across a distance of -0.25 mum for temperatures ranging from 80 to 105 K. Future work will concentrate on increasing IICP by designing spin-VCSELs with In(Ga)As/GaAs quantum dot active regions and incorporating spin-aligner layers that will allow operation at higher temperatures
  • Keywords
    spin polarised transport; surface emitting lasers; -0.25 micron; 80 to 105 K; InGaAs-GaAs; LED; elliptically polarized modes; ferromagnetic semiconductor; hole spins; quantum dot active regions; quantum well vertical-cavity surface-emitting lasers; semiconductor lasers; spin injection; spin transport; spin-VCSEL; spin-aligner layers; Laser modes; Light emitting diodes; Polarization; Quantum dot lasers; Quantum well lasers; Semiconductor lasers; Spin polarized transport; Surface emitting lasers; Temperature distribution; Vertical cavity surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Device Research Conference Digest, 2005. DRC '05. 63rd
  • Conference_Location
    Santa Barbara, CA
  • Print_ISBN
    0-7803-9040-7
  • Type

    conf

  • DOI
    10.1109/DRC.2005.1553125
  • Filename
    1553125