A new step in GeOI pFET scaling and Off-State current reduction: 30nm gate length and record ION/IOFF ratio

Author

Hutin, L. ; Le Royer, Cyrille ; Damlencourt, J. -F ; Hartmann, J. -M ; Grampeix, H. ; Mazzocchi, V. ; Arvet, C. ; Tabone, C. ; Previtali, B. ; Loup, V. ; Roure, M.-C. ; Pouydebasque, A. ; Lafond, D. ; Vinet, M. ; Clavelier, L. ; Faynot, O.

Author_Institution

LETI, CEA, Grenoble, France

fYear

2010

fDate

26-28 April 2010

Firstpage

40

Lastpage

41

Abstract

We demonstrate the shortest Ge-channel pFETs reported to date (Lg=30 nm), on Ultra Thin GeOI obtained with the Ge enrichment technique. The Ion/Ioff ratio is raised to a record value of more than 5 decades thanks to the combination of a low defectivity, a thin Ge layer, well-controlled VΛ and SCE. This ratio could be even further improved using of germanidation, raised S/D, no channel doping, and decreasing the Ge film thickness in order to operate in full depletion at shorter gate lengths.

Keywords

elemental semiconductors; field effect transistors; germanium; Ge; Ge enrichment technique; Ge film thickness; Ge-channel pFET; gate length; germanidation; germanium-on-insulator pFET; off-state current reduction; record I_ON-I_OFF ratio; size 30 nm; ultra thin GeOI pFET; Annealing; Argon; Degradation; Delay; Doping; Germanium; Microstrip; Scalability; Silicon; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology Systems and Applications (VLSI-TSA), 2010 International Symposium on

Conference_Location

Hsinchu

ISSN

1524-766X

Print_ISBN

978-1-4244-5063-3

Electronic_ISBN

1524-766X

Type

conf

DOI

10.1109/VTSA.2010.5488958

Filename

5488958