A new physical compact model for lateral pnp transistors

A novel lateral pnp compact, suitable for computer-aided circuit design purposes, is presented. In this formulation, called MODELLA, the equivalent circuit, analytical equations, and model parameters are derived directly from the physics and structure of the lateral pnp. This physical approach to lateral pnp compact modeling incorporates high injection effects, current crowding effects, and a bias-dependent output conductance. In comparisons with measured device characteristics, the performance of this model is shown to be superior to that of extended Gummel-Poon model. MODELLA facilitates a better intuitive understanding of device behavior due to its close link with device physics and to the physical significance of its parameters