Studies of N-type indium tin sulfide (InxSnyS) thin films using electrochemical deposition technique

Author

Sahdan, M.Z. ; Vequizo, J.J.M. ; Abdel Haleem, A.M. ; Rusop, M. ; Ichimura, M.

Author_Institution

Fac. of Electr. & Electron. Eng., Univ. Tun Hussein Onn Malaysia, Batu Pahat, Malaysia

fYear

2011

fDate

17-19 Oct. 2011

Firstpage

1

Lastpage

5

Abstract

Tin sulfide (SnS) films usually possess p-type electrical conductivity. Indium tin sulfide (In_xSn_yS) thin films were deposited on indium-tin-oxide coated glass by electrochemical deposition from an aqueous solution containing Na₂S₂O₃, SnSO₄, and In₂(SO₄)₃. Different concentration of In₂(SO₄)₃ was added to observe the effects on the structural and electrical properties. All thin films were deposited for the duration of 12 minutes. The thickness of the thin film was measured to be around 0.5 μm. The as-deposited thin films were characterized by scanning electron microscope, X-ray diffraction, Auger electron microscopy (AES) and photo-electro-chemical measurement We observed that the SnS surface morphologies changed when different concentration of indium was added. In this research, a transformation of p-type to n-type conductivity was revealed with additional of In₂(SO₄)₃ greater than 1 mM concentration.

Keywords

Auger electron spectra; IV-VI semiconductors; X-ray diffraction; electrical conductivity transitions; electrodeposition; indium compounds; photoelectrochemistry; scanning electron microscopy; semiconductor growth; semiconductor thin films; surface morphology; tin compounds; Auger electron microscopy; In_xSn_yS; X-ray diffraction; aqueous solution; electrical properties; electrochemical deposition; n-type thin films; p-type electrical conductivity; photoelectrochemical measurement; scanning electron microscopy; structural properties; surface morphology; time 12 min; Chemical elements; Films; Surface treatment; Tin; Turning; Auger electron microscopy; Electrochemical deposition; Indium Sulfide; Photoelectrochemical; Tin Sulfide;

fLanguage

English

Publisher

ieee

Conference_Titel

Photonics (ICP), 2011 IEEE 2nd International Conference on

Conference_Location

Kata Kinabalu

Print_ISBN

978-1-61284-265-3

Electronic_ISBN

978-1-61284-263-9

Type

conf

DOI

10.1109/ICP.2011.6106855

Filename

6106855