Effect of ion species for the surface activated bonding of GaAs wafers on the characteristics of the bonded interfaces

Author

Kono, Genki ; Fujino, Masahisa ; Yamashita, Daiji ; Watanabe, Kentaroh ; Sugiyama, Masakazu ; Nakano, Yoshiaki ; Suga, Tadatomo

Author_Institution

Dept. of Precision Eng., Univ. of Tokyo, Tokyo, Japan

fYear

2015

fDate

14-17 April 2015

Firstpage

478

Lastpage

481

Abstract

Effect of ion species for fast atom beam (FAB) irradiation of surface activated bonding (SAB) of GaAs wafers was investigated by current-voltage (I-V) measurements and transmission electron microscopy (TEM) observations. Ne,Ar,Kr and Xe gases were employed for FAB source. We confirm that it is possible to reduce the interfacial damage and improve the conductivity of GaAs/GaAs bonded interface by changing the ion species for FAB irradiation.

Keywords

III-V semiconductors; electric current measurement; electrical conductivity; gallium arsenide; transmission electron microscopy; voltage measurement; wafer bonding; FAB irradiation; GaAs-GaAs; Ne-Ar-Kr-Xe; SAB; TEM observations; bonded interfaces; conductivity improvement; current-voltage measurements; fast atom beam irradiation; interfacial damage reduction; ion specie effect; surface activated bonding; transmission electron microscopy; wafers characteristics; Bonding; Conductivity; Gallium arsenide; Iron; Radiation effects; Surface treatment; Xenon; Fast atom beam; GaAs; Surface activated bonding; Wafer direct bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Electronics Packaging and iMAPS All Asia Conference (ICEP-IACC), 2015 International Conference on

Conference_Location

Kyoto

Print_ISBN

978-4-9040-9012-1

Type

conf

DOI

10.1109/ICEP-IAAC.2015.7111062

Filename

7111062