Electron cyclotron resonance (ECR) deposited SiO2 films for interlayer dielectric application

Summary form only given. A study of ECR-CVD oxide for interlayer dielectric deposition is reported. Films have been characterized by various techniques such as stress, Fourier transform infrared (FTIR), etch rate, refractive index, breakdown field, and dielectric constant. The film properties and some process integration issues are discussed. C-V and I-V characteristics of an ECR-CVD deposited oxide indicate an 11-MV/cm breakdown field and 4.0 dielectric constant. Stress vs. temperature curves are shown for films deposited with substrate RF bias and without bias. A planar oxide surface on both a high-aspect-ratio gap and a contact topography is shown. As the RF bias increases, the deposition rate decreases, the Si-O peak width narrows, the film stress reduces, and the wet etch rate reduces. The threshold voltage shift caused by UV radiation when microwave power increases is shown