QUBiC2: BiCMOS device technology for 17 GHz bipolar and 0.5 μm CMOS

A novel technique for well design for advanced BiCMOS is demonstrated. By optimization of the well doping the QUBiC2 process achieves 17-GHz bipolar transistors and 0.5-μm L_eff CMOS. This technique has been demonstrated to form updiffused retrograde wells in high-performance BiCMOS with minimum additional process complexity. The use of this technique enhances PMOS, NMOS, and bipolar performance and reduces the effects of parasitic devices, which permits the use of thinner field oxides. By applying this technique bipolar performance in BiCMOS processes can, in principle, be brought to the level of bipolar-only circuits